Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1619567
Reference32 articles.
1. Low‐noise Ga0.47In0.53As photoconductive detectors using Fe compensation
2. Picosecond photoconductivity studies of light‐ion‐bombarded InP
3. Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature
4. Electrical isolation in GaAs by light ion irradiation: The role of antisite defects
5. Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature
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1. Radiation Effects on High-Speed InGaAs Photodiodes;IEEE Transactions on Nuclear Science;2019-07
2. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
3. Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers;IEEE Photonics Technology Letters;2017-12-15
4. Alternative uses of a megavolt tandem accelerator for few-keV studies with ion-source SIMS monitoring;Review of Scientific Instruments;2016-06
5. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
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