Picosecond photoconductivity studies of light‐ion‐bombarded InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333786
Reference11 articles.
1. Picosecond photoresponse in3He+bombarded InP photoconductors
2. Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors
3. Generation of optical pulses shorter than 0.1 psec by colliding pulse mode locking
4. Damaged-induced isolation in n-type InP by light-ion implantation
5. Proton bombardment in InP
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1. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
2. 1.55-μm two-photon absorption generation of subpicosecond electrical pulses in LT-GaAs photoconductors;SPIE Proceedings;1999-11-12
3. Internal photopolarization effect in asymmetric superlattices;Physical Review B;1992-01-15
4. Beryllium bombardment for In0.53Gao0.47As and InP photoconductors with picosecond response times;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-04
5. Chapter 3 Picosecond Photoconductivity: High-Speed Measurements of Devices and Materials;Measurement of High-Speed Signals in Solid State Devices;1990
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