The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-09
2. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices;Optical Materials Express;2011-10-05
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