Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures-Reference-Cited by-同舟云学术

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Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures

Published:2002-04 Issue:1-4 Volume:188 Page:205-209
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Too P.,Ahmed S.,Gwilliam R.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Degeneracy in nonlinear least squares

2. High-energy (MeV) ion implantation and its device applications in GaAs and InP

3. MeV In-ion implantation for electrical isolation of p+-InP

4. High-efficiency proton-isolated GaAs IMPATT diodes

5. IEEE International Workshop on High Performance Electron Device for Mi;Sealy,1998

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Annealing characteristics of electrically isolated InGaAsP devices;Applied Physics Letters;2007-08-06

2. Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-10

3. Comparison of two different isolation schemes for n-type InP by helium implantation;The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

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