Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications

Published:2005-10 Issue:1-2 Volume:240 Page:214-218
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ahmed S.,Lin J.,Haq A.,Sealy B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy

2. Thermodynamic analysis of the MBE growth of GaInAsN

3. G. Li, W. Han, Y. Luo, D. Han, C. Ji, in: Proc. 4th Int. Conf. Sol. Stat. Int. Cir. Technol. 1995, p. 399.

4. Formation of device isolation in GaAs with polyenergetic ion implantation

5. Ion implantation for isolation of III-V semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of AlN/Si based heterogeneous Junction using inter-digitated electrodes for enhanced UV light detection;Optik;2022-09

2. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications;IOP Conference Series: Materials Science and Engineering;2013-12-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP