Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1355011
Reference11 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. Quasiparticle excitations inGaAs1−xNxandAlAs1−xNxordered alloys
3. Electronic structure and phase stability ofGaAs1−xNxalloys
4. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
5. Growth of novel InP-based materials by He-plasma-assisted epitaxy
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