Annealing characteristics of electrically isolated InGaAsP devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2769390
Reference11 articles.
1. Electrical isolation of n-type GaAs and InP using helium ion irradiation at variable target temperatures
2. Formation of device isolation in GaAs with polyenergetic ion implantation
3. MeV In-ion implantation for electrical isolation of p+-InP
4. Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures
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1. Carrier removal and transport in photonic integrated circuit ready InGaAsP/InP substrate: Electrical and transients of charges evaluation;Materials Science in Semiconductor Processing;2021-01
2. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications;IOP Conference Series: Materials Science and Engineering;2013-12-16
3. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing;Journal of Physics D: Applied Physics;2013-04-03
4. High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors;IEEE Transactions on Electron Devices;2013-02
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