Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films-Reference-Cited by-同舟云学术

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Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

Published:2016-10 Issue: Volume:82 Page:1-6
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Denny Yus Rama,Firmansyah Teguh,Oh Suhk Kun,Kang Hee Jae,Yang Dong-Seok,Heo Sung,Chung JaeGwan,Lee Jae Cheol

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Resistance switching memories are memristors

3. Multilevel resistive switching with ionic and metallic filaments

4. Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

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1. Investigation of the evolution and corrosion resistance mechanism of anodized film on Ta surface;Ceramics International;2024-10

2. A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaO -based MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

3. Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition;Applied Materials Today;2024-06

4. Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO₂/RuO₂ Memristor;ACS Applied Materials & Interfaces;2024-03-21

5. A Dual Anion Chemistry‐Based Superionic Glass Enabling Long‐Cycling All‐Solid‐State Sodium‐Ion Batteries;Angewandte Chemie International Edition;2023-12-11

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