Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications-Reference-Cited by-同舟云学术

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Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

Published:2009-12-10 Issue:4 Volume:21 Page:045202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Wang Yan,Liu Qi,Long Shibing,Wang Wei,Wang Qin,Zhang Manhong,Zhang Sen,Li Yingtao,Zuo Qingyun,Yang Jianhong,Liu Ming

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=4/a=045202/pdf

Reference26 articles.

1. Die Stacking (3D) Microarchitecture

2. Multilevel Storage in Lateral Top-Heater Phase-Change Memory

3. A 70 nm 16 Gb 16-Level-Cell NAND flash Memory

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