Affiliation:
1. Key Laboratory of Advanced Structural Materials, Ministry of Education School of Materials Science and Engineering Changchun University of Technology Changchun China
2. Key Laboratory of UV‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun China
Abstract
AbstractHalide perovskites are considered as promising memristive materials for next‐generation optoelectronic devices. This review concisely summarizes the recent development of halide perovskite memristors and highlights their advancements in optoelectronic applications: light‐induced low power switches, optoelectronic logic operations, optoelectronic neuromorphic computation, and artificial vision systems. Finally, we address the challenges and future development prospects of halide perovskites‐based memristors. This review highlights the promising potential of halide perovskite materials for future optoelectronic memory and computing applications.
Funder
Ministry of Science and Technology of the People's Republic of China
Fundamental Research Funds for the Central Universities