Multilevel resistive switching with ionic and metallic filaments
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3151822
Reference24 articles.
1. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
2. Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films
3. Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3
4. Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material
5. Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
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