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Carrier mobility model for GaN

  • Published:2003-01 Issue:1 Volume:47 Page:111-115
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Mnatsakanov Tigran T,Levinshtein Michael E,Pomortseva Lubov I,Yurkov Sergey N,Simin Grigory S,Asif Khan M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Analysis and simulation of semiconductor devices;Selberherr,1984

2. Electrical properties of n-type vapor-grown gallium nitride;Ilegems;J. Phys. Chem. Solids,1973

3. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition;Khan;Appl. Phys. Lett.,1991

4. GaN, AlN, and InN: a review;Strite;J. Vac. Sci. Technol., B,1992

5. In situ monitoring and hall measurements of GaN grown with GaN buffer layers;Nakamura;J. Appl. Phys.,1992
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