N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD-Reference-Cited by-同舟云学术

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N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

Published:2001-11 Issue:11 Volume:45 Page:1945-1949
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tan C.S.,Choi W.K.,Bera L.K.,Pey K.L.,Antoniadis D.A.,Fitzgerald E.A.,Currie M.T.,Maiti C.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. CMOS scaling into the nanometer regime;Taur;Proc IEEE,1997

2. Low-field hole mobility of strained Si on (100) Si1−xGex substrate;Nayak;Appl Phys Lett,1994

3. Room temperature electron mobility in strained Si/SiGe heterostructures;Nelson;Appl Phys Lett,1993

4. Relaxation of strained Si layers grown on SiGe buffers;Samavedam;J Vac Sci Technol B,1999

5. Electrical properties of oxides grown on strained Si using microwave N2O plasma;Bera;Appl Phys Lett,1997

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3. Gate Dielectrics on Engineered Substrates;Series in Material Science and Engineering;2007-01-11

4. Strain-Engineered Substrates;Series in Material Science and Engineering;2007-01-11

5. Thermal Stability of a Reverse-Graded SiGe Buffer Layer for Growth of Relaxed SiGe Epitaxy;Electrochemical and Solid-State Letters;2006

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