Electrical properties of oxides grown on strained Si using microwave N2O plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119308
Reference25 articles.
1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
2. High electron mobility in modulation‐doped Si/SiGe
3. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
4. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures
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1. Gate Dielectrics on Engineered Substrates;Series in Material Science and Engineering;2007-01-11
2. Gate dielectrics on strained-Si/SiGe heterolayers;Solid-State Electronics;2004-08
3. Pulsed laser deposition of YBCO thin films on IBAD YSZ substrates;Superconductor Science and Technology;2002-12-10
4. N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD;Solid-State Electronics;2001-11
5. Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si;Solid-State Electronics;2001-03
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