Author:
Bera L.K.,Senapati B.,Maikap S.,Maiti C.K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Welser J, Hoyt JL, Takagi S, Gibbons JF. IEEE IEDM Tech Dig 1994:373–6
3. Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field
4. Sung JM, Lu CY, Chen ML, Hillenius SJ, Lindenberger WS, Manchanda L, Smith TE, Wang SJ. IEEE IEDM Tech Dig 1989:447–50
5. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献