Relaxation of strained Si layers grown on SiGe buffers-Reference-Cited by-同舟云学术

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Relaxation of strained Si layers grown on SiGe buffers

Published:1999 Issue:4 Volume:17 Page:1424
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Samavedam S. B.,Taylor W. J.,Grant J. M.,Smith J. A.,Tobin P. J.,Dip A.,Phillips A. M.,Liu R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-dependent nonlinear finite element modeling of the elastic and plastic deformation in SiGe heterostructured nanomaterials;Journal of Applied Physics;2017-01-14

2. Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor;AIP Conference Proceedings;2016

3. Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy;Journal of Applied Physics;2015-10-07

4. A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range;Journal of Applied Physics;2012-02-15

5. Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation;Journal of Crystal Growth;2012-01

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