Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Nucleation of misfit dislocations in strained‐layer epitaxy in the GexSi1−x/Si system
2. Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained‐layer superlattices
3. The interpretation of dislocation contrast in x‐ray topographs of GaAs1−x Px
4. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si
5. Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations;Thin Solid Films;2019-11
2. Effect of thermal annealing on the interface quality of Ge/Si heterostructures;Scripta Materialia;2019-09
3. The effect of mismatch strain induced by the a1–a2 domain pattern on dislocation generation of epitaxial ferroelectric films;Materials Research Express;2018-01-23
4. Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface;Acta Materialia;2013-08
5. Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(001) system and its role in the formation of the core structure of edge misfit dislocations;Acta Materialia;2013-01
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