Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345613
Reference25 articles.
1. Defects in epitaxial multilayers
2. Defects associated with the accommodation of misfit between crystals
3. Stability of semiconductor strained‐layer superlattices
4. Correspondence between coherently strained multilayers and a single coherently strained layer on lattice mismatched substrate
5. The Stability of Si-Si1-xGex Strained Layer Heterostructures.
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