Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739723
Reference33 articles.
1. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
3. Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique
4. Additive color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets
5. Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
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