Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3153145
Reference23 articles.
1. High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
3. High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
4. Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
5. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
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2. Pulsed sputtering growth of heavily Si-doped GaN (20 2̄ 1) for tunneling junction contacts on semipolar InGaN (20 2̄ 1) LEDs;Applied Physics Express;2021-05-01
3. Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes;Applied Physics Letters;2020-02-10
4. Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells;Journal of Applied Physics;2020-01-21
5. Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques;Applied Sciences;2019-12-27
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