Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes-Reference-Cited by-同舟云学术

Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes

Published:2020-02-10 Issue:6 Volume:116 Page:062106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Freytag Stefan¹,Winkler Michael¹,Goldhahn Rüdiger¹^ORCID,Wernicke Tim²^ORCID,Rychetsky Monir²,Koslow Ingrid L.²,Kneissl Michael²^ORCID,Dinh Duc V.³^ORCID,Corbett Brian³^ORCID,Parbrook Peter J.³^ORCID,Feneberg Martin¹^ORCID

Affiliation:

1. Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

2. Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany

3. Tyndall National Institute, University College Cork, Cork T12 R5CP, Ireland

Funder

Deutsche Forschungsgemeinschaft

Science Foundation Ireland

Alexander von Humboldt-Stiftung

FP7 Nanosciences, Nanotechnologies, Materials and new Production Technologies

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134952

Reference38 articles.

1. A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

4. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

5. High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm