High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm-Reference-Cited by-同舟云学术

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High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Published:2012-07-12 Issue:8 Volume:5 Page:082102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Takagi Shimpei,Enya Yohei,Kyono Takashi,Adachi Masahiro,Yoshizumi Yusuke,Sumitomo Takamichi,Yamanaka Yuichiro,Kumano Tetsuya,Tokuyama Shinji,Sumiyoshi Kazuhide,Saga Nobuhiro,Ueno Masaki,Katayama Koji,Ikegami Takatoshi,Nakamura Takao,Yanashima Katsunori,Nakajima Hiroshi,Tasai Kunihiko,Naganuma Kaori,Fuutagawa Noriyuki,Takiguchi Yoshiro,Hamaguchi Tatsushi,Ikeda Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=8/a=082102/pdf

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