Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode-Reference-Cited by-同舟云学术

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Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

Published:2005-12-05 Issue:23 Volume:87 Page:231110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sharma R.,Pattison P. M.,Masui H.,Farrell R. M.,Baker T. J.,Haskell B. A.,Wu F.,DenBaars S. P.,Speck J. S.,Nakamura S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2139841

Reference14 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

3. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

5. Strain effect on electronic and optical properties of GaN/AlGaN quantum‐well lasers

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