Abstract
Abstract
Recently, α-Ga2O3 has been attracting great attentions as a new wide bandgap semiconductor, however, the reason why metastable α-Ga2O3 is grown by mist chemical vapor deposition (CVD) has not been understood. In this study, in order to elucidate growth mechanism of mist CVD-grown α-Ga2O3, growth processes in the initial stage were investigated by atomic force microscopy, transmission electron microscopy, and X-ray diffraction reciprocal space mapping. We found that the characteristics of mist CVD make the relaxation mechanisms of α-Ga2O3 on (0001) sapphire different from those of molecular beam epitaxy, pulsed-laser deposition, and metalorganic chemical vapor deposition. We also proposed the growth procedure in the initial stage.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献