Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

Published:2020-08 Issue: Volume:831 Page:154776
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Cheng Yaolin,Xu Yu,Li Zhe,Zhang Jiaqi,Chen Dazheng,Feng Qian,Xu Shengrui,Zhou Hong,Zhang Jincheng,Hao Yue,Zhang Chunfu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference29 articles.

1. Development of gallium oxide power devices;Higashiwaki;Phys. Status Solidi A,2014

2. Polymorphism of Ga2O3 and the system Ga2O3—H2O;Roy;J. Am. Chem. Soc.,1952

3. Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers;Zatsepin;Superlattice. Microst.,2018

4. Ab initio study of N-doped β-Ga2O3 with intrinsic defects: the structural, electronic and optical properties;Dong;J. Alloys Compd.,2017

5. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method;Aida;Jpn. J. Appl. Phys.,2008

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1. High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications;Science China Materials;2024-04-25

2. Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy;Materials Today Communications;2024-03

3. Heteroepitaxial growth of a-, m-, and r-plane α-Ga2O3 thin films on rh-ITO electrodes for vertical device applications;Journal of Crystal Growth;2024-03

4. Recent Advancements in α‐Ga₂O₃ Thin Film Growth for Power Semiconductor Devices via Mist CVD Method: A Comprehensive Review;Crystal Research and Technology;2024-02-23

5. Improved heteroepitaxy of κ-Ga2O3 on c-plane sapphire by initial mist flow stabilization during mist chemical vapor deposition;Thin Solid Films;2024-02

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