Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy-Reference-Cited by-同舟云学术

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Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy

Published:2024-01 Issue: Volume: Page:108179
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Fan Junliang,Xiao Li,Qin Yuantao,Yan Hao,Qu Xiaolin,Li Zhenzhen,Gong Hengxiang

Funder

Chongqing Municipal Education Commission Foundation

National Natural Science Foundation of China

Chongqing Science and Technology Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference27 articles.

1. P-GaSe/ n-Ga2O3van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity;Wang;ACS Photonics,2021

2. Effect of film thickness on photoelectric properties of β-Ga2O3 films prepared by radio frequency magnetron sputtering;Li;Wuli Xuebao/Acta Physica Sinica,2022

3. Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique;Ma;Journal of Semiconductors,2019

4. Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors;Fang;InfoMat,2020

5. Recent Advance in Preparation and Ultra-precision Machining of New Generation Semiconductor Material of β-Ga2O3 Single Crystals;Gao;Jixie Gongcheng Xuebao/Journal of Mechanical Engineering,2021

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