Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy-Reference-Cited by-同舟云学术

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Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy

Published:2024-03 Issue: Volume:38 Page:108179
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Fan Junliang,Xiao Li,Qin Yuantao,Yan Hao,Qu Xiaolin,Li Zhenzhen,Gong Hengxiang

Funder

Chongqing Municipal Education Commission Foundation

National Natural Science Foundation of China

Chongqing Science and Technology Commission

Publisher

Elsevier BV

Reference27 articles.

1. P-GaSe/ n-Ga2O3van der Waals heterostructure photodetector at solar-blind wavelengths with ultrahigh responsivity and detectivity;Wang;ACS Photonics,2021

2. Effect of film thickness on photoelectric properties of β-Ga2O3 films prepared by radio frequency magnetron sputtering;Li;Wuli Xuebao/Acta Phys. Sin.,2022

3. Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique;Ma;J. Semicond.,2019

4. Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors;Fang;InfoMat,2020

5. Recent advance in preparation and ultra-precision machining of new generation semiconductor material of β-Ga2O3 single crystals;Gao;Jixie Gongcheng Xuebao/J. Mech. Eng.,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on synthesis and applications of gallium oxide materials;Advances in Colloid and Interface Science;2024-06

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