Recent Advance in Preparation and Ultra-precision Machining of New Generation Semiconductor Material of β-Ga2O3 Single Crystals
Author:
Publisher
Chinese Journal of Mechanical Engineering
Subject
Applied Mathematics,Computer Science Applications,Mechanical Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of abrasive on tribological behavior and polishing effect of β-Ga2O3(100) substrate;Materials Science in Semiconductor Processing;2024-03
2. Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy;Materials Today Communications;2024-01
3. The state‐of‐art review of ultra‐precision machining using text mining: Identification of main themes and recommendations for the future direction;WIREs Data Mining and Knowledge Discovery;2023-10-15
4. Subsurface damage pattern and formation mechanism of monocrystalline β-Ga2O3 in grinding process;Frontiers of Mechanical Engineering;2022-06
5. Prediction and experimental investigation of depth of subsurface damage in semi-consolidated abrasive grinding of cleavable gallium oxide crystals;The International Journal of Advanced Manufacturing Technology;2021-11-10
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