Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
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2. Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array;Applied Surface Science;2017-03
3. Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.510 nm/Si(001) as an example;Philosophical Magazine Letters;2016-08-24
4. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness;Physics of the Solid State;2015-04
5. Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface;Acta Materialia;2013-08
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