Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.11640/fulltext
Reference48 articles.
1. Surfactants in epitaxial growth
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Defect self-annihilation in surfactant-mediated epitaxial growth
4. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
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3. In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter;Thin Solid Films;2014-11
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