Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.155414/fulltext
Reference17 articles.
1. Silicon germanium heterostructures in electronics: the present and the future
2. n- and p-Type SiGe HFETs and circuits
3. Auger spectroscopy thermodesorption of Sb on Si1−xGex layers grown on Si() substrates
4. Compliant effect of low-temperature Si buffer for SiGe growth
5. High-quality strain-relaxed SiGe films grown with low temperature Si buffer
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