Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron-Reference-Cited by-同舟云学术

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Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron

Published:2015-05-14 Issue:18 Volume:117 Page:185705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bagaev V. S.¹,Krivobok V. S.¹²,Nikolaev S. N.¹^ORCID,Novikov A. V.³⁴^ORCID,Onishchenko E. E.¹,Pruchkina A. A.¹

Affiliation:

1. P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow Region, Russia

3. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhny Novgorod, Russia

4. Lobachevsky State University of Nizhni Novgorod, Nizhny Novgorod, Russia

Funder

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921103

Reference24 articles.

1. High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

2. Strain engineered segregation regimes for the fabrication of thin Si1−xGex layers with abrupt n-type doping

3. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

4. Si/SiGe heterostructures: from material and physics to devices and circuits

5. Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

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1. Electron–hole liquid in semiconductors and low-dimensional structures;Physics-Uspekhi;2017-11-30

2. Diamond-EuF 3 nanocomposites with bright orange photoluminescence;Diamond and Related Materials;2017-02

3. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells;Semiconductors;2016-12

4. Absorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effects;Superlattices and Microstructures;2016-04

5. Electron–hole liquid in low-dimensional silicon–germanium heterostructures;Journal of Experimental and Theoretical Physics;2016-03

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