Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3608159
Reference19 articles.
1. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
2. Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance
3. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
4. Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides
5. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
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1. On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices;IEEE Transactions on Electron Devices;2017-09
2. Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile;IEEE Electron Device Letters;2017-03
3. Europium Silicide – a Prospective Material for Contacts with Silicon;Scientific Reports;2016-05-23
4. Effects of the Mo composition of Mo-alloyed Yb/Si contacts on the microstructures and electrical properties;Japanese Journal of Applied Physics;2016-05-12
5. Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron;Journal of Applied Physics;2015-05-14
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