Auger spectroscopy thermodesorption of Sb on Si1−xGex layers grown on Si() substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference33 articles.
1. Isoconcentration studies of antimony diffusion in silicon
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3. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies
4. Sb doping of Si molecular-beam epitaxial layers: Influence of the substrate misorientation
5. Sb-enhanced diffusion in strainedSi1−xGex: Dependence on biaxial compression
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1. Nucleation versus instability race in strained films;Physical Review Materials;2017-10-09
2. Influence of interfacial reaction upon atomic diffusion studied by in situ Auger electron spectroscopy;Surface Science;2014-06
3. Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures;Thin Solid Films;2010-01
4. Sb-surfactant-mediated growth of Si and Ge nanostructures;Physical Review B;2004-04-15
5. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress;Physical Review B;2004-04-15
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