Sb doping of Si molecular-beam epitaxial layers: Influence of the substrate misorientation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.7615/fulltext
Reference16 articles.
1. Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
2. Industrial aspects of silicon molecular beam epitaxy
3. Silicon homoepitaxy on high index surfaces and the effect of antimony on this growth
4. Arbitrary doping profiles produced by Sb‐doped Si MBE
5. Molecular beam epitaxy of silicon: Effects of heavy Sb doping
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1. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations;Semiconductors;2017-12
2. Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy;Journal of Crystal Growth;2017-10
3. Unified kinetic model of dopant segregation during vapor-phase growth;Physical Review B;2005-11-18
4. Auger spectroscopy thermodesorption of Sb on Si1−xGex layers grown on Si() substrates;Surface Science;2002-11
5. Step-driven molecular adsorption of Sb on Si(111);Surface Science;1998-01
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