Industrial aspects of silicon molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference17 articles.
1. CW IMPATTs made from silicon molecular beam epitaxy material
2. Ge-Si/Si infra-red, zone-folded superlattice detectors
3. Modulation doping in GexSi1−x/Si strained layer heterostructures
4. The n-channel SiGe/Si modulation-doped field-effect transistor
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2. Strain engineered segregation regimes for the fabrication of thin Si1−xGex layers with abrupt n-type doping;Journal of Applied Physics;2010-02
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4. Growth studies of Ge-islands for enhanced performance of thin film solar cells;Physica E: Low-dimensional Systems and Nanostructures;2002-04
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