Growth studies of Ge-islands for enhanced performance of thin film solar cells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Modeling and optimization of thin-film devices with Si/sub 1-x/Ge/sub x/ alloys
3. An Industrial Single‐Slice Si‐MBE Apparatus
4. Industrial aspects of silicon molecular beam epitaxy
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation;Japanese Journal of Applied Physics;2019-05-29
2. Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks;Japanese Journal of Applied Physics;2018-07-20
3. Ellipsometry and spectroscopy on 1.55μm emitting Ge islands in Si for photonic applications;Physical Review B;2012-09-13
4. Sensitization of Porous Silicon with Germanium Quantum Dots for Up-Conversion of Low Energy Photons via Intermediate Band for Third Generation Solar Cells;ECS Transactions;2011-10-04
5. Group IV Nanocrystals for Silicon Photovoltaics;MRS Proceedings;2011
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