Modeling and optimization of thin-film devices with Si/sub 1-x/Ge/sub x/ alloys-Reference-Cited by-同舟云学术

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Modeling and optimization of thin-film devices with Si/sub 1-x/Ge/sub x/ alloys

Published:1999 Issue:10 Volume:46 Page:2111-2115
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Koschier L.M.,Wenham S.R.,Green M.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/17204/00792005.pdf?arnumber=792005

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing crystalline silicon solar cell efficiency with SiGe1− layers;Results in Physics;2017

2. Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D;International Journal of Photoenergy;2014

3. In situ growth of Ge-rich poly-SiGe:H thin films on glass by RF magnetron sputtering for photovoltaic applications;Applied Surface Science;2011-02

4. Ion beam mixing for processing of nanostructure materials;Journal of Electronic Materials;2006-05

5. Ion beam mixing of silicon-germanium thin films;Journal of Electronic Materials;2005-05

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