Molecular beam epitaxy of silicon: Effects of heavy Sb doping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs
2. Properties of Schottky barriers and p‐n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers
3. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
4. Acceptor dopants in silicon molecular‐beam epitaxy
5. Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping Control
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3. Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures;Journal of Applied Physics;2001-09
4. Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy;Semiconductors;2001-08
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