Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy

Published:2000-07-30 Issue:Part 1, No. 7B Volume:39 Page:4554-4557
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakamura Kazuhiro,Shimizu Hirofumi,Kodera Jun,Yokota Katsuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between Surface Cracks and Distribution of Crystalline Silicon Grains in RF-Sputtered β-FeSi2 Films;Procedia Engineering;2016

2. Uneven Distribution of Silicon Crystalline Grains in RF-Sputtered β-FeSi₂ Films Deposited on Off-Oriented Silicon Substrate;Transactions of the Materials Research Society of Japan;2016

3. Reduction of Surface Cracks in β-FeSi₂ Films by Substrate Heating during RF-Sputtering Deposition;Transactions of the Materials Research Society of Japan;2013

4. Reduction of Surface-Cracks in RF-Sputtered β-FeSi₂ Films Using Si-Rich FeSi₄ Target;Transactions of the Materials Research Society of Japan;2012

5. Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application;2010 35th IEEE Photovoltaic Specialists Conference;2010-06

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