Isoconcentration studies of antimony diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364286
Reference13 articles.
1. Point defects and dopant diffusion in silicon
2. Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism
3. Heavy doping effects in the diffusion of group IV and V impurities in silicon
4. A mechanism of interfacial reactions between boron nitride and nickel aluminide
5. Atomistic models of vacancy‐mediated diffusion in silicon
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1. Point Defects and Diffusion in Semiconductors;Handbook of Solid State Diffusion, Volume 1;2017
2. Properties of Point Defects in Silicon: New Results after a Long-Time Debate;Solid State Phenomena;2013-10
3. Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions;Physical Review B;2013-08-15
4. Precipitation of Antimony Implanted into Silicon;ECS Transactions;2012-05-04
5. Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si;Physical Review B;2004-03-12
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