Strained Ge overlayer on aSi(001)−(2×1)surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.10827/fulltext
Reference20 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime
3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Cyclic Growth of Strain-Relaxed Islands
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1. Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates;Two-Dimensional Nanostructures for Energy-Related Applications;2016-09-30
2. Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation;Semiconductor Science and Technology;2012-02-16
3. Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4;Journal of Crystal Growth;2010-10
4. GaAs epitaxy on Si substrates: modern status of research and engineering;Physics-Uspekhi;2008-05-31
5. Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition;Semiconductors;2008-01
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