A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3687923
Reference49 articles.
1. Embedded Source/Drain SiGe Stressor Devices on SOI: Integrations, Performance, and Analyses
2. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
3. P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths
4. The scaled performance of Si/Si/sub 1-x/Gex resonant tunneling diodes
5. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
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