P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths-Reference-Cited by-同舟云学术

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P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

Published:2006-04-25 Issue:4B Volume:45 Page:3106-3109
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bhuwalka Krishna K.,Born Mathias,Schindler Markus,Schmidt Matthias,Sulima Torsten,Eisele Ignaz

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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