Low‐field hole mobility of strained Si on (100) Si1−xGexsubstrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111558
Reference15 articles.
1. The mobility of electrons in strained silicon
2. High electron mobility in modulation‐doped Si/SiGe
3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
4. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
5. Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex
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