Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET’s with oxides from 2.3 to 1.2 nm thick
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Lin E, Moussy E, Bauza D. In: MRS 2002 Spring Meeting, San Francisco, April 1–5, MRS Proceedings, vol. 706, 2002, p. 293
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3. A reliable approach to charge-pumping measurements in MOS transistors
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5. Stress induced leakage current analysis via quantum yield experiments
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