Charge pumping test technique using CMOS ring oscillator on leakage issue-Reference-Cited by-同舟云学术

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Charge pumping test technique using CMOS ring oscillator on leakage issue

Published:2017-10 Issue: Volume:68 Page:40-43
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Liu Yongbo,Zhu Zhengyong,Zhu Huilong,Wan Guangxing,Li Junfeng,Zhao Chao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Engineering

Reference17 articles.

1. Charge pumping in MOS devices;Brugler;IEEE Trans. Electron Devices,1969

2. A reliable approach to charge-pumping measurements in MOS transistors;Groeseneken;IEEE Trans. Electron Devices,1984

3. Electrical properties of Si–SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick;Bauza;Solid-State Electron.,2003

4. Extraction of Si-SiO2 interface trap densities in MOS structures with ultrathin oxides;Bauza;IEEE Electron Device Lett.,2002

5. On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs;Masson;IEEE Electron Device Lett.,1999

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOS capacitor based Dickson charge pump and ripple cancellation techniques using an LC circuit;International Journal of Knowledge-based and Intelligent Engineering Systems;2021-01-18

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