Use of Small Gate Voltage Pulses for the Extraction of the Interface Trap Densities in MOS Structures Using The Charge Pumping Technique

Abstract

AbstractA general model for charge pumping is derived and is used for extracting interface trap densities using small gate voltage pulses. In MOS structures with ultrathin oxides, this strongly reduces the leakage current and prevents the oxide from any degradation. Interface trap densities from devices with oxides from 2.3 to 1.3 nm thick are reported for the first time.