Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Published:2015-11-28 Issue:20 Volume:118 Page:204107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Djara V.¹^ORCID,Cherkaoui K.¹^ORCID,Negara M. A.¹,Hurley P. K.¹

Affiliation:

1. Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland

Funder

European Commission (EC)

Irish Research Council for Science, Engineering and Technology (IRCSET)

Science Foundation Ireland (SFI)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936313

Reference38 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Improved Split C–V Method for Effective Mobility Extraction in sub-0.1-<tex>$muhbox m$</tex>Si MOSFETs

3. Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

4. Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

5. Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

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2. Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks;Solid-State Electronics;2017-06

3. The impact of interface and border traps on current-voltage, capacitance-voltage, and split-CV mobility measurements in InGaAs MOSFETs;physica status solidi (a);2016-11-15