Impact of Fermi level pinning inside conduction band on electron mobility of In<inf>x</inf>Ga<inf>1−x</inf>As MOSFETs and mobility enhancement by pinning modulation-Reference-Cited by-同舟云学术

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Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Taoka N.,Yokoyama M.,Kim S.H.,Suzuki R.,Iida R.,Lee S.,Hoshii T.,Jevasuwan W.,Maeda T.,Yasuda T.,Ichikawa O.,Fukuhara N.,Hata M.,Takenaka M.,Takagi S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131622.pdf?arnumber=6131622

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