Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors-Reference-Cited by-同舟云学术

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

Published:2013-12 Issue:4 Volume:13 Page:456-462
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Taoka Noriyuki,Yokoyama Masafumi,Kim Sang Hyeon,Suzuki Rena,Lee Sunghoon,Iida Ryo,Hoshii Takuya,Jevasuwan Wipakorn,Maeda Tatsuro,Yasuda Tetsuji,Ichikawa Osamu,Fukuhara Noboru,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/6677525/06656906.pdf?arnumber=6656906

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